Ion implantation of 2D materials

The Faculty of Physics at the Georg-August-Universität Göttingen is looking to fill the position of a

Research Assistant (PhD position in physics)
(Salary: Pay grade 13 TV-L 65% for the duration of 3 years)

The ion beam physics group of Prof. H. Hofsäss at the University of Göttingen, Germany, seeks a highly motivated research assistant for a 3-year research project funded by the Volkswagen foundation. The project aims at developing  ultra-low energy ion implantation (10 eV up to  30 eV) for implantation and doping of two-dimensional materials such as graphene and transition metal di-chalcogenides  such as MoS2. The implantation process for dopant atoms like N, P, Se, Nb or W shall be studied in detail and optimized to develop single photon emitters in MoS2. In particular, methods should be developed for substrate cleaning and analytical tools to determine doping efficiency end defect generation. It is furthermore the aim to develop mask free techniques for controlled lateral doping with different dopant species. A unique system for mass selected ion implantation under UHV conditions as well as various analytical techniques are available in the ion beam physics group. The project is part of a collaboration with other groups, with focus on optical properties, single photon emitters and high resolution TEM analyses.

Qualifications and experience: Master Sc. in physics with good knowlege in solids state physics, materials physics and semiconductor physics. Experience with UHV technology and ion accelerators, as well as thin film and surface characterization techniques is expected.
The University of Göttingen is an equal opportunities employer and places particular emphasis on fostering career opportunities for women. Qualified women are therefore strongly encouraged to apply in fields in which they are underrepresented. The university has committed itself to being a family-friendly institution and supports their employees in balancing work and family life. The mission of the University is to employ a greater number of severely disabled persons. Applications from severely disabled persons with equivalent qualifications will be given preference.

Please send your formal application with the usual documents to Prof. Dr. Hans Hofsäss, II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen. e-mail:

Closing date for applications is August 13, 2017.

Ihr Ansprechpartner:

Bitte senden Sie Ihre Bewerbung an:

  • Prof. Hans Hofsäss
  • II. Physikalisches Institut, Universität Göttingen
  • Friedrich-Hund-Platz 1
  • 37077 Göttingen
  • E-Mail:
  • Telefon: +49551397669

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